Write line design in MRAM

ABSTRACT

A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of pending U.S. non-provisional patent application Ser. No. 10/827,769, filed Apr. 20, 2004, the entire contents of which application is incorporated herein by reference.

BACKGROUND

The present invention relates generally to non-volatile memories, and more particularly to magnetic random access memories.

Magnetic Random Access Memory (MRAM) is a type of non-volatile memory with fast programming time and high density. The architecture for MRAM includes a plurality or array of memory cells and a plurality of word line and bit line intersections. Typically, the magnetic memory cell used is composed of a magnetic tunnel junction (MTJ) cell, an isolation transistor, and the intersection of word and bit lines. The isolation transistor is generally a N-channel field effect transistor (FET). An interconnect cell connects the isolation transistor to the MTJ device, to the bit line, and to the word line used to create part of the magnetic field for programming the MRAM cell.

Typically, a MTJ cell includes a non-magnetic conductor forming a lower electrical contact, a pinned magnetic layer, a tunnel barrier layer positioned on the pinned layer, and a free magnetic layer positioned on the tunnel barrier layer with an upper contact on the free magnetic layer.

The pinned layer of magnetic material has a magnetic vector that is always pointed in the same direction. The magnetic vector of the free layer is free, but constrained by the physical size of the layer, to point in either of two directions. An MTJ cell is used by connecting it in a circuit such that electricity flows vertically through the cell from one of the layers to the other. The MTJ cell may be electrically represented as a resistor, and the size of the resistance depends upon the orientation of the magnetic vectors. As is understood by those skilled in the art, the MTJ cell has a relatively high resistance when the magnetic vectors are pointed in opposite directions and a relatively low resistance when the magnetic vectors are aligned.

A bit line is generally associated with each column of an array of MTJ cells and a word line is associated with each row of the array. The bit lines and word lines are used to address individual cells in the array for both reading and programming or storing information in the array. Programming of a selected cell is accomplished by passing predetermined currents through the word and bit lines intersecting at the selected cell. For embodiment, the magnetic field resulting from a “write current” changes the direction of the data layer, or free layer. As a result, the data are written as soon as the “write current” is applied.

It is of course desirable to have the low resistance (parallel vectors) as low as possible, and the high resistance (anti-parallel vectors) much higher than the low resistance so that the change can be easily detected in associated electronic circuitry.

Desirable in the art is an improved high density MRAM device.

SUMMARY

In view of the foregoing, this invention provides a method for reducing the area used by MRAM memories.

Various aspects and advantages will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating the principles of the invention by way of embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A-1B illustrate the top and side views of a conventional MRAM cell design.

FIG. 2A-2B illustrate the top and side views of an MRAM cell design in accordance with one embodiment of the present invention.

FIG. 3 illustrates a first enhancement of the MRAM cell design in accordance with one embodiment of the present invention.

FIG. 4A illustrates a conventional technique for constructing a magnetic tunnel junction over a write line.

FIGS. 5A-5D illustrate a second enhancement of the MRAM cell design in accordance with one embodiment of the present invention.

DESCRIPTION

FIGS. 1A and 1B illustrate, respectively, the top and side views of a conventional MRAM cell design. A write line 102 is on top of another write line 104, the latter being separated from and orthogonal to the former by a magnetic tunnel junction (MTJ) cell 106. The MTJ cell 106 is further connected, through an interconnect cell 108, to an N-channel Field Effect Transistor (FET) 110. In this embodiment, since it is assumed that a uniform magnetic field is required to write to the MTJ cell, the widths of write lines 102 and 104 are shown to be larger than the width of MTJ cell 106 to ensure that the magnetic current is properly flipped during a “write” operation.

However, since the width of the write line is inversely proportional to cell density and directly proportional to the magnitude of the “write current”, MRAM design may become very costly. In addition, the magnetic flux efficiency also decreases due to a decrease in the write-current density, thereby further reducing performance.

FIGS. 2A and 2B illustrate, respectively, the top and side views of an MRAM cell design in accordance with one embodiment of the present invention. A write line 202 is on top of another write line 204, the latter being separated from the former by the MTJ cell 106. The MTJ cell 106 is further connected, through an interconnect cell 206, to an N-channel Field Effect Transistor (FET) 208. In this embodiment, the both widths of write lines 202 and 204 are shown to be smaller than the width of MTJ cell 106. It is understood that since the MTJ is of a rectangular or even square shape, the term “width” is used to mean the length of any of its sides. Compared to the conventional MRAM cell design, as long as at least one write line has a width smaller than one of the sides of the MTJ cell 106, cell density may be increased and “write current” for that particular write line may be reduced. It is demonstrated that the switching threshold current would not increase when a non-uniform magnetic field is applied. The write lines may be designed as narrow as the minimum design rule for the technology used. However, if the write line is too narrow, it would induce non-uniform magnetic field which may lead to writing error. Preferably, the width of the write line is larger than half of that of the MTJ. In some embodiments, the width of write line is configured between half of the width of the MTJ and the width of the MTJ.

FIG. 3 illustrates a first enhancement of the MRAM cell design in accordance with one embodiment of the present invention. FIG. 3 shows a cross section and top view 300 of a write line, which is constructed with a conductive material 302, integrated with a shielding layer 304 which may include a ferromagnetic cladding layer and an antiferromagnetic layer. The conductive material 302 may be constructed using materials such as Cu or Al, whereas the ferromagnetic material may be constructed using materials such as Fe, Co, Mn, Ni etc. The shielding layer acts as a “keeper layer”, thereby acting to focus and strengthen the magnetic field 306 as seen by the MTJ cell. The coated keeper layer may be fabricated by conventional semiconductor processes, including: oxide etching, material deposition and chemical mechanical polishing. As understood by those skilled in the art, the use of the magnetic material 304 as herein proposed may increase or enlarge the magnetic flux efficiency when the write line is conducting. It may allow for not only further reduction of the width of the write lines but also reduction of the write current.

FIG. 4 illustrates a conventional technique for constructing a magnetic tunnel junction over a write line. Specifically, FIG. 4 illustrates a conventional chemical mechanical polish (CMP) fabrication technique for producing the lower conductor line for an MRAM cell. With reference to FIG. 4, a cross section 400 illustrates the patterning of the MTJ cell and the write line. The cross section 400 includes an oxide 402, a conductor 404 and an MTJ cell 406. After CMP, voids may appear at the top edge of conductor line, as illustrated by two dotted circles 408, because removal rates between the conductor and oxide layer may be different.

To alleviate the above mentioned problem, a process sequence as illustrated by FIGS. 5A-5D is proposed in accordance with one embodiment of the present invention. With reference to FIG. 5A, a trench 502 is cut into a substrate material 504 such as a dielectric material using photo masking and plasma etching techniques. In FIG. 5B, a filler material 506 for forming the write line is deposited to fill the trench 502, thereby covering the trench opening. Typically, the material 506 is a conductor, e.g. metal. If the write line is to have a magnetic keeper layer, the magnetic material is first deposited in the trench before the conducting filler material is formed. If there is any concern about the connection between the keeper layer and filler material, an adhesion layer may also be formed between them. Another layer of material 508 is then deposited to cover the trench 502. Before the material 508 is deposited, the surface of the conducting material in the trench and the substrate material that it is embedded in may be flattened. It is however understood by those skilled in the art that, dependent upon design and process, the filler material 506 may not be the same as the newly deposited material 508 as long as the conducting write line formed in the trench 502 is in electrical contact with the deposited material 508. At this stage, a partial CMP may then be performed so that the surface is guaranteed to be flat since only one uniform material is involved in the CMP process. In FIG. 5C, various layers of films 510 creating the MTJ cell are deposited as usual. Finally, in FIG. 5D, part of the material deposit 508 and part of the various layers 510 of films creating the MTJ cell are removed, thereby creating an MTJ cell 512.

By introducing the material 508 between the write line 506 and the MTJ cell 512, the material 508 serves as a “buffer layer” to have a full contact with the write line and a flat contact surface with MTJ above. As such, the CMP process only deals with a uniform and ensures that the CMP process will not produce voids significant enough to affect performance.

Since the write line is reduced to be narrower in width than the MTJ cell, the area used by arrays of MRAM memories is reduced. By using a surrounding magnetic material or keeper layer, the MRAM arrays have increased effective magnetic field. In addition, the improved construction method reduces the likelihood of having a defective device caused by an uneven CMP surface of the write line.

The above invention provides many different embodiments, or embodiments, for implementing different features of the invention. Specific embodiments of components, and processes are described to help clarify the invention. These are, of course, merely embodiments and are not intended to limit the invention from that described in the claims.

Although illustrative embodiments of the invention have been shown and described, other modifications, changes, and substitutions are intended in the foregoing invention. Accordingly, it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention, as set forth in the following claims. 

1. A method for forming a write line in a magnetic random access memory device, the method comprising: forming a trench in a substrate material; filling the trench with a conductive filler material; planarizing the filler material and exposing the substrate material; forming a conducting buffer layer over the conductive filler material, wherein the buffer layer has a substantially flat surface overlying the conductive filler material; and forming a magnetic tunnel junction (MTJ) device in contact with the buffer layer, wherein the MTJ has a width of about two times a width of the trench.
 2. The method of claim 1, wherein the substrate material is a dielectric material.
 3. The method of claim 1, wherein the step of forming a conducting buffer layer further comprises performing a chemical mechanical polish to form a flat contact surface for contacting the MTJ.
 4. The method of claim 3, further comprising forming a magnetic layer surrounding the conductive filler material.
 5. The method of claim 4, further comprising forming an adhesion layer between the filler material and the magnetic layer.
 6. The method of claim 4, wherein the magnetic layer contains Mn.
 7. The method of claim 4, wherein the magnetic layer comprises a ferromagnetic material.
 8. The method of claim 7, wherein the magnetic layer further comprises an antiferromagnetic layer adjacent to the ferromagnetic material.
 9. A method for forming a write line in a magnetic random access memory device, the method comprising: forming a trench in a substrate material; filling the trench with a conductive filler material; planarizing the filler material and exposing the substrate material; forming a conductive buffer layer over the conductive filler material; planarizing the buffer layer; and forming a magnetic tunnel junction (MTJ) device in contact with the buffer layer.
 10. The method of claim 9, wherein the MTJ has a width about two times a width of the trench.
 11. The method of claim 9, further comprising forming a magnetic layer surrounding the conducting filler material.
 12. The method of claim 11, further comprising forming an adhesion layer between the filler material and the magnetic layer.
 13. The method of claim 11, wherein the magnetic layer contains Mn.
 14. The method of claim 11 wherein the magnetic layer comprises a ferromagnetic material.
 15. The method of claim 14 wherein the magnetic layer further comprises an antiferromagnetic layer adjacent to the ferromagnetic material.
 16. A method for forming a write line in a magnetic random access memory device, the method comprising: forming a trench in a substrate material; forming a magnetic layer overlying the trench and substantially along the trench sidewalls; filling the trench with a conductive filler material overlying the magnetic layer; planarizing the filler material and exposing the substrate material; forming a conducting buffer layer over the conducting filler material, wherein the buffer layer has a substantially flat surface overlying the conducting filler material; and forming a magnetic tunnel junction (MTJ) device in contact with the buffer layer.
 17. The method of claim 16 wherein the MTJ has a width about two times a width of the trench.
 18. The method of claim 16 wherein the magnetic layer comprises a ferromagnetic material.
 19. The method of claim 18 wherein the magnetic layer further comprises an antiferromagnetic layer adjacent to the ferromagnetic material. 